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| PBSS302PD 40 V PNP low VCEsat (BISS) transistor Rev. 01 -- 18 April 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS302ND 1.2 Features s s s s s Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC) Up to 15 A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation 1.3 Applications s s s s s s Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1: Symbol VCEO IC ICM RCEsat [1] [2] Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance t = 1 ms or limited by Tj(max) IC = -6 A; IB = -600 mA [2] Conditions open base [1] Min - Typ 55 Max -40 -4 -15 75 Unit V A A m Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O3, standard footprint. Pulse test: tp 300 s; 0.02. Philips Semiconductors PBSS302PD 40 V PNP low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector collector 1 2 3 6 5 4 3 4 sym030 Simplified outline Symbol 1, 2, 5, 6 3. Ordering information Table 3: Ordering information Package Name PBSS302PD SC-74 Description plastic surface mounted package; 6 leads Version SOT457 Type number 4. Marking Table 4: Marking codes Marking code C9 Type number PBSS302PD 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation tp 300 s Tamb 25 C [2] [3] [4] [1] [2] [5] Conditions open emitter open base open collector [1] Min - Max -40 -40 -5 -4 -15 -0.8 -2 360 600 750 1.1 2.5 Unit V V V A A A A mW mW mW W W t = 1 ms or limited by Tj(max) 9397 750 14513 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 2 of 15 Philips Semiconductors PBSS302PD 40 V PNP low VCEsat (BISS) transistor Table 5: Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Tstg Tj Tamb [1] [2] [3] [4] [5] Parameter storage temperature junction temperature ambient temperature Conditions Min -65 -65 Max +150 150 +150 Unit C C C Device mounted on a ceramic PCB, AL2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Operated under pulsed conditions: Duty cycle 10 % and pulse width tp 10 ms. 1600 Ptot (mW) 1200 (1) 006aaa270 800 (2) (3) 400 (4) 0 -75 -25 25 75 125 175 Tamb (C) (1) Ceramic PCB, AL2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, mounting pad for collector 1 cm2 (4) FR4 PCB, standard footprint Fig 1. Power derating curves 9397 750 14513 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 3 of 15 Philips Semiconductors PBSS302PD 40 V PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] [2] [3] [4] [1] [5] Min - Typ - Max 350 208 160 113 50 45 Unit K/W K/W K/W K/W K/W K/W Rth(j-sp) [1] [2] [3] [4] [5] thermal resistance from junction to solder point Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Device mounted on a ceramic PCB, AL2O3, standard footprint. Operated under pulsed conditions: Duty cycle 10 % and pulse width tp 10 ms. 103 Zth(j-a) (K/W) 102 (1) (2) (3) (4) (5) (6) (7) 006aaa271 10 (8) (9) (10) 1 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint (1) = 1 (2) = 0.75 (3) = 0.5 (4) = 0.33 (5) = 0.2 (6) = 0.1 (7) = 0.05 (8) = 0.02 (9) = 0.01 (10) = 0 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 14513 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 4 of 15 Philips Semiconductors PBSS302PD 40 V PNP low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 006aaa272 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) 10 1 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for collector 1 cm2 (1) = 1 (2) = 0.75 (3) = 0.5 (4) = 0.33 (5) = 0.2 (6) = 0.1 (7) = 0.05 (8) = 0.02 (9) = 0.01 (10) = 0 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 14513 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 5 of 15 Philips Semiconductors PBSS302PD 40 V PNP low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) 006aaa273 10 1 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for collector 6 cm2 (1) = 1 (2) = 0.75 (3) = 0.5 (4) = 0.33 (5) = 0.2 (6) = 0.1 (7) = 0.05 (8) = 0.02 (9) = 0.01 (10) = 0 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 14513 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 6 of 15 Philips Semiconductors PBSS302PD 40 V PNP low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tamb = 25 C unless otherwise specified. Symbol ICBO ICES IEBO hFE Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain Conditions VCB = -30 V; IE = 0 A VCB = -30 V; IE = 0 A; Tj = 150 C VCE = -30 V; VBE = 0 V VEB = -5 V; IC = 0 A VCE = -2 V; IC = -0.5 A VCE = -2 V; IC = -1 A VCE = -2 V; IC = -2 A VCE = -2 V; IC = -4 A VCE = -2 V; IC = -6 A VCEsat collector-emitter saturation voltage IC = -0.5 A; IB = -50 mA IC = -1 A; IB = -50 mA IC = -2 A; IB = -200 mA IC = -4 A; IB = -400 mA IC = -6 A; IB = -600 mA RCEsat VBEsat collector-emitter saturation resistance base-emitter saturation voltage IC = -6 A; IB = -600 mA IC = -0.5 A; IB = -50 mA IC = -1 A; IB = -50 mA IC = -1 A; IB = -100 mA IC = -4 A; IB = -400 mA VBEon td tr ton ts tf toff fT Cc base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency collector capacitance Pulse test: tp 300 s; 0.02. [1] [1] [1] [1] [1] [1] [1] [1] [1] Min 200 200 175 80 30 - Typ -46 -70 -120 -220 -320 55 -0.8 -0.84 -0.84 -1.0 -0.8 12 43 55 241 80 321 110 50 Max -0.1 -50 -0.1 -0.1 -60 -110 -180 -300 -450 75 -0.85 -0.9 -1 -1.1 -1.0 - Unit A A A A mV mV mV mV mV m V V V V V ns ns ns ns ns ns MHz pF VCE = -2 V; IC = -2 A VCC = -10 V; IC = -2 A; IBon = -0.1 A; IBoff = 0.1 A VCE = -10 V; IC = -0.1 A; f = 100 MHz VCB = -10 V; IE = ie = 0 A; f = 1 MHz - [1] 9397 750 14513 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 7 of 15 Philips Semiconductors PBSS302PD 40 V PNP low VCEsat (BISS) transistor 600 hFE (1) 006aaa282 -1.6 VBE (V) -1.2 006aaa283 400 (2) -0.8 200 (3) -0.4 0 -10-1 -1 -10 -102 -103 -104 -105 IC (mA) 0 -10-1 -1 -10 -102 -103 -104 -105 IC (mA) VCE = -2 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C VCE = -2 V (1) Tamb = 25 C Fig 5. DC current gain as a function of collector current; typical values -1 VCEsat (V) (1) Fig 6. Base-emitter voltage as a function of collector current; typical values -1 VCEsat (V) 006aaa285 006aaa284 -10-1 (2) (3) -10-1 (1) (2) -10-2 -10-2 (3) -10-3 -10-1 -1 -10 -102 -103 -104 IC (mA) -10-3 -10-1 -1 -10 -102 -103 -104 -105 IC (mA) IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values 9397 750 14513 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 8 of 15 Philips Semiconductors PBSS302PD 40 V PNP low VCEsat (BISS) transistor -1.3 VBEsat (V) -0.9 (1) (2) (3) 006aaa287 103 RCEsat () 102 (1) 006aaa327 10 (2) (3) 1 -0.5 10-1 -0.1 -10-1 -1 -10 -102 -103 -104 -105 IC (mA) 10-2 -10-1 -1 -10 -102 -103 -104 IC (A) IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 9. Base-emitter saturation voltage as a function of collector current; typical values Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values 9397 750 14513 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 9 of 15 Philips Semiconductors PBSS302PD 40 V PNP low VCEsat (BISS) transistor -12 IC (A) -8 006aaa288 102 RCEsat () 10 006aaa289 (1) (2) (4) (3) (5) (6) (7) (8) (9) (10) 1 (1) (2) -4 10-1 (3) 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 VCE (V) 10-2 -10-1 -1 -10 -102 -103 -104 IC (mA) Tamb = 25 C (1) IB = -400 mA (2) IB = -360 mA (3) IB = -320 mA (4) IB = -280 mA (5) IB = -240 mA (6) IB = -200 mA (7) IB = -160 mA (8) IB = -120 mA (9) IB = -80 mA (10) IB = -40 mA IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C Fig 11. Collector current as a function of collector-emitter voltage; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values 9397 750 14513 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 10 of 15 Philips Semiconductors PBSS302PD 40 V PNP low VCEsat (BISS) transistor 8. Test information -I B 90 % input pulse (idealized waveform) -I Bon (100 %) 10 % -I Boff -I C 90 % output pulse (idealized waveform) -I C (100 %) 10 % t td t on tr ts t off tf 006aaa266 Fig 13. BISS transistor switching time definition VBB VCC RB (probe) oscilloscope 450 VI R1 R2 RC Vo (probe) 450 DUT oscilloscope mgd624 (1) VCC = -10 V; IC = -2 A; IBon = -0.1 A; IBoff = 0.1 A Fig 14. Test circuit for switching times 9397 750 14513 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 11 of 15 Philips Semiconductors PBSS302PD 40 V PNP low VCEsat (BISS) transistor 9. Package outline 3.1 2.7 6 5 4 0.6 0.2 1.1 0.9 3.0 2.5 1.7 1.3 pin 1 index 1 0.95 1.9 Dimensions in mm 2 3 0.40 0.25 0.26 0.10 04-11-08 Fig 15. Package outline SOT457 (SC-74) 10. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PBSS302PD Package SOT457 Description 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 [1] [2] [3] [2] [3] Packing quantity 3000 -115 -125 5000 10000 -135 -165 For further information and the availability of packing methods, see Section 15. T1: normal taping T2: reverse taping 9397 750 14513 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 12 of 15 Philips Semiconductors PBSS302PD 40 V PNP low VCEsat (BISS) transistor 11. Revision history Table 9: Revision history Release date 20050418 Data sheet status Product data sheet Change notice Doc. number 9397 750 14513 Supersedes Document ID PBSS302PD_1 9397 750 14513 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 13 of 15 Philips Semiconductors PBSS302PD 40 V PNP low VCEsat (BISS) transistor 12. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14513 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 18 April 2005 14 of 15 |
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